1 ELM34808AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 7 a ta=70c 6 pulsed drain current idm 20 a 3 power dissipation ta=25c pd 2.0 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34808AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=30v ? id=7a ? rds(on) < 25m (vgs=10v) ? rds(on) < 37m (vgs=4.5v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view)
2 ELM34808AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs= 0v 1 a vds=20v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 20 a 1 static drain-source on-resistance rds(on) vgs=10v, id= 7a 18 25 m 1 vgs =4. 5v, id =6 a 25 37 m forward transconductance gfs vds = 5v, id =7 a 19 s 1 diode forward voltage vsd if = 1a, vgs=0v 1 v 1 max.body-diode continuous current is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 790 pf output capacitance coss 175 pf reverse transfer capacitance crss 65 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=7a 16.0 nc 2 gate-source charge qgs 2.5 nc 2 gate-drain charge qgd 2.1 nc 2 turn - on delay time td(on) vgs=10v, vds=10v, id1a rgen=6 2.2 4.4 ns 2 turn - on rise time tr 7.5 15.0 ns 2 turn - off delay time td(off) 11.8 21.3 ns 2 turn - off fall time tf 3.7 7.4 ns 2 note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. ta=25 c 4 - dual n-channel mosfet
3 typical electrical and thermal characteristics ELM34808AA-N 4 - dual n-channel mosfet 3 aug-13-2004 dual n-channel enhancement mode field effect transistor p2503hvg sop-8 lead free niko-sem body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
4 4 - ELM34808AA-N dual n-channel mosfet 4 aug-13-2004 dual n-channel enhancement mode field effect transistor p2503hvg sop-8 lead free niko-sem
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